technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier qualified per mil-prf-19500/211 ? glass passivated die ? glass to metal header construction ? rugged construction ? high surge current capability t4-lds-0140 rev. 1 (091750) page 1 of 3 devices levels 1n3164 1n3172 1n3164r 1n3172r jan 1n3168 1n3174 1n3168r 1n3174r jantx 1N3170 1N3170r jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit peak repetitive reverse voltage 1n3164 1n3168 1N3170 1n3172 1n3174 1n3164r 1n3168r 1N3170r 1n3172r 1n3174r v rwm 200 400 600 800 1000 v average forward current, t c = 150 i f 200 a average forward current, t c = 120 i f 300 a peak surge forward current @ t p = 8.3ms, half sinewave, t c = 200c i fsm 6250 a thermal resistance, junction to case r jc 0.20 c/w typical thermal resistance r cs 0.80 c/w operating case temperature range t j -65c to 200c c storage temperature range t stg -65c to 200c c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit forward voltage i fm = 940a, t c = 25c v fm 1.55 v reverse current v rm = 200, t c = 25c v rm = 400, t c = 25c v rm = 600, t c = 25c v rm = 800, t c = 25c v rm = 1000, t c = 25c 1n3164 1n3168 1N3170 1n3172 1n3174 1n3164r 1n3168r 1N3170r 1n3172r 1n3174r i rm 10 ma reverse current v rm = 200, t c = 175c v rm = 400, t c = 175c v rm = 600, t c = 175c v rm = 800, t c = 175c v rm = 1000, t c = 175c 1n3164 1n3168 1N3170 1n3172 1n3174 1n3164r 1n3168r 1N3170r 1n3172r 1n3174r i rm 30 ma note: do-205ab (do-9)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0140 rev. 1 (091750) page 2 of 3 graphs figure 3 forward current derating figure 1 typical forward characteristics figure 2 typical reverse characteristics figure 5 maximum nonrepetitive multi-cycle su rge current
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0140 rev. 1 (091750) page 3 of 3 package dimensions dimensions symbol inches millimeters notes min max min max a 1.520 38.10 4 b .530 .755 13.46 19.18 c .063 .172 1.60 4.37 d 1.100 27.94 d1 .600 15.24 e 1.218 1.252 30.94 31.75 f .250 .562 6.35 14.27 5 h 5.125 6.750 130.18 171.45 i1 .375 9.53 7 m .660 .745 16.76 18.92 2 m1 .125 3.18 6 n .793 .828 20.14 21.03 q 2.300 57.15 q1 .375 9.53 6 t .265 .350 6.73 3.89 w 3 notes: 1. metric equivalents are given for general information only. 2. complete threads to extend to within 2.5 threads of seating plane. 3. .750-16 unf-2a. maximum pitch diameter of plated threads shall be basic pitch diameter. .7094 (18.019 mm) ref. (screw thread standards for federal services) fed- std-h28. 4. angular orientation of terminal and tabulation with respect to hex base is undefined. square or radius on end of terminal is undefined. 5. a chamfer (or undercut) on one or both ends of hexagonal portions is optional. 6. tabulation optional. 7. minimum flat. 8. flexible leads. physical dimensions for semiconductor devices
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